Difference between IGBT and MOSFET
IGBT and MOSFET are Power Transistor both are voltage controlled device with isolated Gate.
IGBT- Insulated Gate Bipolar Transistor.
- IGBT suitable for high voltage, low frequency application.
- IGBT has additional p-n junction and giving it properties of Both MOSFET and BJT.
- IGBT terminal- Gate, Collector, Emitter.
- Available Voltage rating of IGBT is up to 1400 Volts.
- IGBT can be used frequency rating up to 20 kHz.
- IGBT required more time to turn off.
- It is highly tolerant to Electrostatic discharge.
- IGBT has lower forward voltage drop.
- IGBT has great capacity of handling transient voltage and current.
- IGBT cost is more.
MOSFET- Metal-Oxide Semiconductor Filed Effect Transistor
- MOSFET suitable for low voltage and high frequency application.
- MOSFET doesn't have a p-n junction
- MOSFET terminal- Gate, Drain, Source.
- Available Voltage rating of MOSFET is up to 600 Volts.
- MOSFET can be used frequency rating up to 50kHz.
- MOSFET required less time to turn off.
- Electrostatic discharge may harm MOSFET.
- MOSFET has higher forward voltage drop.
- MOSFET doesn't have capability to handle transient. It may disturbed working or damage MOSFET.
- MOSFET is low cost device.