Difference between IGBT and MOSFET

IGBT and MOSFET are  Power Transistor both are voltage controlled device with isolated Gate.

IGBT- Insulated Gate Bipolar Transistor.

  1. IGBT suitable for high voltage, low frequency application.
  2. IGBT has additional p-n junction and giving it properties of Both MOSFET and BJT. 

     
  3. IGBT terminal- Gate, Collector, Emitter.
  4. Available Voltage rating of IGBT is up to 1400 Volts.
  5. IGBT can be used frequency rating up to 20 kHz.
  6. IGBT required more time to turn off.
  7. It is highly tolerant to Electrostatic discharge.  
  8. IGBT has lower forward voltage drop.
  9. IGBT has great capacity of handling transient voltage and current.
  10. IGBT cost is more.

MOSFET- Metal-Oxide Semiconductor Filed Effect Transistor 

  1. MOSFET suitable for low voltage and high frequency application.
  2. MOSFET doesn't have a p-n junction
  3. MOSFET terminal- Gate, Drain, Source.
  4. Available Voltage rating of MOSFET is up to 600 Volts.
  5. MOSFET can be used frequency rating up to 50kHz.
  6. MOSFET required less time to turn off.
  7. Electrostatic discharge may harm MOSFET.
  8. MOSFET has higher forward voltage drop.
  9. MOSFET doesn't have capability to handle transient. It may disturbed working or damage MOSFET.
  10. MOSFET is low cost device.

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